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Title: Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x]
Authors: Curreem, K. K. S.
Lee, Pui-fai
Wong, K. S.
Dai, Jiyan
Zhou, M. J.
Wang, J.
Li, Quan
Subjects: Hafnium compounds
High-k dielectric thin films
Ge-Si alloys
Semiconductor materials
Compressive strength
Internal stresses
Pulsed laser deposition
X-ray photoelectron spectra
Transmission electron microscopy
Chemical interdiffusion
Semiconductor-insulator boundaries
Issue Date: 1-May-2006
Publisher: American Institute of Physics
Source: Applied physics letters, 1 May 2006, v. 88, no. 18, 182905, p. 1-3.
Abstract: Interfacial reactions and electrical properties of HfO₂and HfAlO high-k gate dielectric films on strained Si[sub 1−x]Ge[sub x](x = 17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO₂with alumina can reduce the GeO[sub x] formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.
Rights: © 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. K. S. Curreem et al., Appl. Phys. Lett. 88, 182905 (2006) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.2201887
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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