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|Title: ||Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x]|
|Authors: ||Curreem, K. K. S.|
Wong, K. S.
Zhou, M. J.
|Subjects: ||Hafnium compounds|
High-k dielectric thin films
Pulsed laser deposition
X-ray photoelectron spectra
Transmission electron microscopy
|Issue Date: ||1-May-2006 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 1 May 2006, v. 88, no. 18, 182905, p. 1-3.|
|Abstract: ||Interfacial reactions and electrical properties of HfO₂and HfAlO high-k gate dielectric films on strained Si[sub 1−x]Ge[sub x](x = 17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO₂with alumina can reduce the GeO[sub x] formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films.|
|Description: ||DOI: 10.1063/1.2201887|
|Rights: ||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K. K. S. Curreem et al., Appl. Phys. Lett. 88, 182905 (2006) and may be found at http://apl.aip.org/resource/1/applab/v88/i18/p182905_s1|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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