Please use this identifier to cite or link to this item:
Title: Modeling of anomalous hysteresis behavior of compositionally graded ferroelectric films at low fields
Authors: Wong, Chung-kwan
Shin, Franklin G.
Subjects: Ferroelectric thin films
Dielectric hysteresis
Dielectric polarisation
Electrical conductivity
Space charge
Issue Date: 15-Jul-2005
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 July 2005, v. 98, no. 2, 024104, p. 1-6.
Abstract: We study the hysteresis behavior of compositionally graded ferroelectric films by theoretical simulations. Anomalous vertical (polarization) shift behavior of hysteresis loops measured by a Sawyer-Tower circuit at low/medium applied fields is investigated. The anomalous ferroelectric response is discussed by the use of a multilayer model to account for the variation of properties across the film thickness. Electrical conductivities of the ferroelectric layers have been taken into account and time-dependent space-charge-limited conduction has been adopted. The effects of charge mobility and the amplitude of applied field on the D-E loop shift were examined. Theoretical calculations are discussed in relation to the experimental data from previous works.
Rights: © 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C. K. Wong & F. G. Shin, J. Appl. Phys. 98, 024104 (2005) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.1985970
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

Files in This Item:
File Description SizeFormat 
Wong_Modeling_anomalous_hysteresis.pdf127.55 kBAdobe PDFView/Open

All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated. No item in the PolyU IR may be reproduced for commercial or resale purposes.