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|Title: ||Mechanisms of imprint effect on ferroelectric thin films|
|Authors: ||Zhou, Yan|
Chan, H. K.
Shin, Franklin G.
|Subjects: ||Ferroelectric thin films|
|Issue Date: ||15-Jul-2005 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 15 July 2005, v. 98, no. 2, 024111, p. 1-9.|
|Abstract: ||We have developed a single/double layer model to explain horizontal shifting of measured D-E hysteresis loops (imprint) for ferroelectric thin films. Such phenomenon can be explained by considering three mechanisms or their multiple effects: (1) stress induced by film/electrode lattice
mismatch or clamping, (2) domain pinning induced by, e.g., oxygen vacancies, or (3) degradation of ferroelectric properties in film/electrode surface layers. First, it is found that hysteresis loops under the influence of stress exhibit large horizontal shifts with magnitudes comparable to those observed in experiments. Second, a pseudo-non-switching layer with a large coercive field is assumed to be present at the film/electrode interface in an otherwise homogeneous ferroelectric thin film, and in
this case our simulation also shows a large imprint effect. Third, it is also found that time-dependent space-charge-limited conduction is likely to be one origin for the occurrence of imprint.|
|Description: ||DOI: 10.1063/1.1984075|
|Rights: ||© 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Zhou et al., J. Appl. Phys. 98, 024111 (2005) and may be found at http://link.aip.org/link/?jap/98/024111.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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