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|Title: ||Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers|
|Authors: ||Fong, Wai-keung Patrick|
Leung, B. H.
|Subjects: ||Gallium compounds|
Wide band gap semiconductors
Semiconductor epitaxial layers
Molecular beam epitaxial growth
|Issue Date: ||1-Jul-2003 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 1 July 2003, v. 94, no. 1, p. 387-391.|
|Abstract: ||We report the growth of high-mobility Si-doped GaN epilayers utilizing unique double buffer layer (DBL) structures, which consist of a thin buffer layer and a thick GaN intermediate-temperature buffer layer (ITBL). In this study, three types of DBL were investigated: (i) thin GaN low-temperature buffer layer /GaN ITBL (type I); (ii) nitridated Ga metal film/GaN ITBL (type II); and (iii) thin AlN high-temperature buffer layer /GaN ITBL (type III). Systematic measurements were conducted on the electron mobilities and the low-frequency noise over a wide range of temperatures. It is found that the electron mobilities of the GaN films are substantially improved with the use of DBLs, with the sample using type III DBL which exhibits the highest low-temperature mobility. Furthermore, the same sample also demonstrates the elimination of deep levels at 91 and 255 meV below the conduction band. This is believed to result from the relaxation of tensile stress during growth with the use of type III DBLs.|
|Description: ||DOI: 10.1063/1.1579843|
|Rights: ||© 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in W. K. Fong et al., J. Appl. Phys. 94, 387 (2003) and may be found at http://link.aip.org/link/?jap/94/387.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||EIE Journal/Magazine Articles|
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