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|Title: ||A thermal model for static current characteristics of AlGaN/GaN high electron mobility transistors including self-heating effect|
|Authors: ||Chang, Yuancheng|
Tong, K. Y.
|Subjects: ||Aluminium compounds|
Wide band gap semiconductors
High electron mobility transistors
Semiconductor device models
|Issue Date: ||15-Feb-2006 |
|Publisher: ||American Institute of Physics|
|Citation: ||Journal of applied physics, 15 Feb. 2006, v. 99, no. 4, 044501, p. 1-5.|
|Abstract: ||A thermal model of AlGaN/GaN high electron mobility transistors HEMTs has been developed based on a quasi-two-dimensional numerical solution of Schrödinger’s equation coupled with Poisson’s equation. The static current characteristics of HEMT devices have been obtained with the consideration of the self-heating effect on related parameters including polarization, electron mobility, saturation velocity, thermal conductivity, drain and source resistance, and conduction-band discontinuity at the interface between AlGaN and GaN. The simulation results agree well with our experimental data. It has also been demonstrated that the reduction of the saturation drain current at high power dissipation is primarily due to the decrease of electron mobility in the channel. The
proposed model is valuable for predicting and evaluating the performance of different device structures and packages for various applications.|
|Description: ||DOI: 10.1063/1.2171776|
|Rights: ||© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Chang et al., J. Appl. Phys. 99, 044501 (2006) and may be found at http://link.aip.org/link/?jap/99/044501.|
|Type: ||Journal/Magazine Article|
|ISSN: ||0021-8979 (print)|
|Appears in Collections:||EIE Journal/Magazine Articles|
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