PolyU Institutional Repository >
Applied Physics >
AP Journal/Magazine Articles >
Please use this identifier to cite or link to this item:
|Title: ||In-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔])O₃-0.35 PbTiO₃ thin films in a very wide frequency range|
|Authors: ||Wang, Yu|
Cheng, Y. L.
Chan, Helen L. W.
Liu, Z. R.
|Subjects: ||Lead compounds|
Piezoelectric thin films
Ferroelectric thin films
Pulsed laser deposition
|Issue Date: ||30-Aug-2004 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 30 Aug. 2004, v. 85, no. 9, p.1580-1582.|
|Abstract: ||The in-plane dielectric properties of epitaxial 0.65Pb(Mg[sub ⅓]Nb[sub ⅔]O₃−0.35 PbTiO₃ thin films deposited on MgO by pulsed-laser ablation were determined over a wide frequency range and compared with single crystals and ceramics. Depressed values of the dielectric constant, induced diffused phase transition, dielectric relaxation, and nonlinear behaviors were observed in the films. The overall dielectric behaviors of the films were found to be a mixture of that of relaxor ferroelectrics and normal ferroelectrics. The correlation of the microstructural features (mechanical clamping, small grain size, and epitaxial nature) and the dielectric behaviors was discussed.|
|Rights: ||© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Wang et al. Appl. Phys. Lett. 85, 1580 (2004) and may be found at http://link.aip.org/link/?apl/85/1580.|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.