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|Title: ||Microwave characterization of (Pb,La)TiO₃ thin films integrated on ZrO₂/SiO₂/Si wafers by sol-gel techniques|
|Authors: ||Song, Z. T.|
Chan, Helen L. W.
Feng, S. L.
|Subjects: ||Lead compounds|
Ferroelectric thin films
Thin film capacitors
Scanning electron microscopy
|Issue Date: ||15-Nov-2004 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 15 Nov. 2004, v. 85, no. 20, p.4696-4698|
|Abstract: ||Polycrystalline perovskite lead lanthanum titanate (PLT) thin films were prepared by a sol-gel method on ZrO₂/SiO₂/Si substrates. The structure of the films was studied by x-ray diffraction and scanning electron microscopy, and the microwave dielectric properties characterized on a network analyzer. A strong dependence of the dielectric constant of PLT films and, correspondingly, the resonance frequency of PLT-based interdigital capacitor on the sample preparation conditions were observed. They resulted from the structural transformation of PLT from a layered structure to a uniform film as the annealing temperature was raised from 550 to 700 °C, suggesting a possible way to modify the device performance by controlling the layered structure of the ferroelectric film.|
|Rights: ||© 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Z.T. Song et al. Appl. Phys. Lett. 85, 4696 (2004) and may be found at http://link.aip.org/link/?apl/85/4696|
|Type: ||Journal/Magazine Article|
|Appears in Collections:||MRC Journal/Magazine Articles|
AP Journal/Magazine Articles
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