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Title: Slow relaxation of piezoelectric response in CdZnTe ferroelectric semiconductor single crystals
Authors: Ke, Shanming
Huang, Haitao
Wang, Tao
Fan, Huiqing
Jie, Waiqi
Chan, Helen L. W.
Subjects: Cadmium compounds
Dielectric polarisation
Dielectric relaxation
Dielectric resonance
Ferroelectric semiconductors
II-VI semiconductors
Zinc compounds
Issue Date: 15-Oct-2007
Publisher: American Institute of Physics
Source: Applied physics letters, 15 Oct. 2007, v. 91, 162901, p. 1-3
Abstract: The piezoelectric response in Cd[sub 0.9]Zn[sub 0.1]Te (CZT) semiconductor single crystals has been investigated by analyzing room temperature impedance spectra. The polarization is significantly influenced by light illumination. A slow relaxation process of the piezoelectric response has been observed with a relaxation time of 37 s, which is comparable to the discharge current results. The frequencies for piezoelectric resonance and antiresonance can be tuned to lower values when a bias field is applied and can be recovered when the bias field is removed. These phenomena may be universal for ferroelectric semiconductors and can be explained by a slow relaxation model in dielectrics.
Rights: © 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S. Ke et al. Appl. Phys. Lett. 91, 162901 (2007) and may be found at
Type: Journal/Magazine Article
ISSN: 0003-6951
Appears in Collections:MRC Journal/Magazine Articles
AP Journal/Magazine Articles

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