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|Title: ||Strain sensor|
|Authors: ||Cheng, Ching-Hsiang|
|Issue Date: ||21-Dec-2010 |
|Citation: ||US Patent 7,854,173 B2. Washington, DC: US Patent and Trademark Office, 2010.|
|Abstract: ||A strain sensor (10) for measuring strain greater than 10%, the sensor (10) comprising: an upper polydimethylsiloxane (PDMS) substrate (20) having measurement electrodes (90) extending therethrough; a lower PDMS substrate (30) bonded to a lower surface of the upper PDMS substrate (20), and an upper surface of the lower PDMS substrate (30) having a patterned portion (50); and a conductive fluid (70) contained within the patterned portion (50) in contact with the measurement electrodes (90).|
|Rights: ||Assignee: The Hong Kong Polytechnic University.|
|Appears in Collections:||Patents of PolyU|
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