PolyU IR
 

PolyU Institutional Repository >
Research Institute of Innovative Products and Technologies >
RIIPT Patents >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2902

Title: Strain sensor
Authors: Cheng, Ching-Hsiang
Chao, Chen
Zhu, Yun
Issue Date: 21-Dec-2010
Citation: US Patent 7,854,173 B2. Washington, DC: US Patent and Trademark Office, 2010.
Abstract: A strain sensor (10) for measuring strain greater than 10%, the sensor (10) comprising: an upper polydimethylsiloxane (PDMS) substrate (20) having measurement electrodes (90) extending therethrough; a lower PDMS substrate (30) bonded to a lower surface of the upper PDMS substrate (20), and an upper surface of the lower PDMS substrate (30) having a patterned portion (50); and a conductive fluid (70) contained within the patterned portion (50) in contact with the measurement electrodes (90).
Rights: Assignee: The Hong Kong Polytechnic University.
Type: Patent
URI: http://hdl.handle.net/10397/2902
Appears in Collections:Patents of PolyU
RIIPT Patents

Files in This Item:

File Description SizeFormat
us7854173b2.pdf433.67 kBAdobe PDFView/Open



Facebook Facebook del.icio.us del.icio.us LinkedIn LinkedIn


All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated.
No item in the PolyU IR may be reproduced for commercial or resale purposes.

 

© Pao Yue-kong Library, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong
Powered by DSpace (Version 1.5.2)  © MIT and HP
Feedback | Privacy Policy Statement | Copyright & Restrictions - Feedback