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|Title:||Control of the strain and magnetoresistance of LaMnO[sub 3+δ] thin films using the magnetostriction of Terfenol-D alloy|
|Authors:||Zheng, R. K.|
Chan, Helen L. W.
|Publisher:||American Institute of Physics|
|Source:||Journal of applied physics, 17 Dec. 2010, v. 108, no. 12, 124103, p. 1-4.|
|Abstract:||We have fabricated a magnetoelectric laminate structure composed of magnetostrictive Tb[sub 0.3]Dy[sub 0.7]Fe[sub 1.92] (Terfenol-D) alloy and LaMnO[sub 3+δ] (LMO)/0.67Pb(Mg[sub ⅓]Nb[sub ⅔])O₃–0.33PbTiO₃ (PMN–PT) structure where the LMO film is epitaxially grown on the piezoelectric PMN–PT single-crystal substrate. When an external dc magnetic field is applied perpendicular to the film plane, the magnetoresistance of the LMO film at 220 K under a magnetic field of 1.2 T for the LMO/PMN–PT/Terfenol-D structure is enhanced by 31.6% with respect to that for the LMO/PMN–PT structure without Terfenol-D. Measurements of the magnetoelectric effects of the LMO/PMN–PT/Terfenol-D structure indicate that the strain induced by the magnetostriction of the Terfenol-D alloy is transferred to the PMN–PT substrate, which induces changes in the strain state of the PMN–PT substrate, thereby modifying the strain and magnetoresistance of the epitaxial LMO film.|
|Rights:||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in R.K. Zheng et al., J. Appl. Phys. 108, 124103 (2010) and may be found at http://jap.aip.org/resource/1/japiau/v108/i12/p124103_s1.|
|Appears in Collections:||MRC Journal/Magazine Articles|
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