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|Title: ||ZnO random laser diode arrays for stable single-mode operation at high power|
|Authors: ||Liang, H. K.|
Yu, S. F.
Yang, H. Y.
|Subjects: ||II-VI semiconductors|
Semiconductor laser arrays
|Issue Date: ||16-Dec-2010 |
|Publisher: ||American Institute of Physics|
|Citation: ||Applied physics letters, 16 Dec. 2010, v. 97, no. 24, 241107, p. 1-3.|
|Abstract: ||An array of highly disordered i-ZnO:Al(3%) random cavities, which have 1 μm width, 150 nm thickness, and 2 mm length, is sandwiched between n-ZnO:Al(5%) and p-GaN/sapphire substrate to form an array of heterojunctions. The random cavities, which are electrically isolated and optically coupled with the adjacent random cavities, are laterally separated by a 1 μm wide Al₂O₃ dielectric insulator. Stable single-mode operation is observed from the laser diode array under high electrical pumping (i.e., >6×threshold current) at room temperature.|
|Description: ||DOI: 10.1063/1.3527922|
|Rights: ||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in H.K. Liang, S.F. Yu and H.Y. Yang, Appl. Phys. Lett. 97, 241107 (2010) and may be found at http://apl.aip.org/resource/1/applab/v97/i24/p241107_s1|
|Type: ||Journal/Magazine Article|
|ISSN: ||0003-6951 (print)|
|Appears in Collections:||AP Journal/Magazine Articles|
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