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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2896

Title: Temperature and electric field dependence of the dielectric property and domain evolution in [001]-oriented 0.34Pb(In[sub ½]Nb[sub ½])O₃–0.25Pb(Mg[sub ⅓]Nb[sub ⅔])O₃–0.41PbTiO₃ single crystal
Authors: Chen, Yong
Lam, K. H.
Zhou, Dan
Gao, X. S.
Dai, Jiyan
Luo, Haosu
Chan, Helen L. W.
Subjects: Dielectric hysteresis
Dielectric polarisation
Electric domains
Ferroelectric transitions
Lead compounds
Permittivity
X-ray diffraction
Issue Date: 10-Jan-2011
Publisher: American Institute of Physics
Citation: Journal of applied physics, 10 Jan. 2011, v. 109. no. 1, 014111, p. 1-5.
Abstract: Ferroelectric domain structure and evolution, as well as phase transition, of [001]-oriented 34Pb(In[sub ½]Nb[sub ½])O₃–0.25Pb(Mg[sub ⅓]Nb[sub ⅔])O₃–0.41PbTiO₃ single crystal has been studied through temperature and frequency-dependent relative permittivity characterization. Under dc bias, the transition temperature from rhombohedral-to-tetragonal phases becomes lower and the transition temperature from macrodomain to microdomain structures increases. Phase transition from rhombohedral to tetragonal is confirmed by temperature-dependent x-ray diffraction. These results are also well supported by direct domain observation by means of piezoresponse force microscopy under dc bias at different temperatures, as well as polarization-electric field hysteresis loop measurement.
Description: DOI: 10.1063/1.3525163
Rights: © 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Y. Chen et al., J. Appl. Phys. 109, 014111 (2011) and may be found at http://jap.aip.org/resource/1/japiau/v109/i1/p014111_s1.
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/2896
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles
MRC Journal/Magazine Articles

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