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Title: Kinetic Monte Carlo simulation of shape transition of strained quantum dots
Authors: Lam, Chi-hang
Subjects: Elasticity
Ge-Si alloys
Island structure
Monte Carlo methods
Semiconductor growth
Semiconductor quantum dots
Solid-state phase transformations
Surface energy
Surface reconstruction
Issue Date: 15-Sep-2010
Publisher: American Institute of Physics
Source: Journal of applied physics, 15 Sept. 2010, v. 108, no. 6, 064328, p.1-8.
Abstract: The pyramid-to-dome transition in Ge᙮Si₁₋᙮ on Si(100) initiated by step formation on pyramidal quantum dots is atomistically simulated using a multistate lattice model in two-dimensions incorporating effective surface reconstructions. Under quasiequilibrium growth conditions associated with low deposition rates, the transition occurs at island size nᴄ following (see article file for details of the abstract) independent of temperature and deposition rate. The shape transition is found to be an activated process. Results are explained by a theory based on simple forms of facet energies and elastic energies estimated using a shallow island approximation. An asymptotic scaling relation (see article file for details of the abstract) for x→0 applicable to d=2 or 3 dimensions is derived. The shape transition energy barrier can be dominated by the interface energy between steep and shallow facets.
Rights: © 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in C.H. Lam, J. Appl. Phys. 108, 064328 (2010) and may be found at
Type: Journal/Magazine Article
DOI: 10.1063/1.3483248
ISSN: 0021-8979 (print)
1089-7550 (online)
Appears in Collections:AP Journal/Magazine Articles

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