Please use this identifier to cite or link to this item:
|Title:||Nonvolatile organic transistor-memory devices using various thicknesses of silver nanoparticle layers|
|Authors:||Wang, S. M.|
Leung, Dennis Chi-wah
Chan, Paddy K. L.
Organic field effect transistors
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 12 July 2010, v. 97, no. 2, 023511, p. 1-3.|
|Abstract:||We demonstrate the modification of the memory effect in organic memory devices by adjusting the thickness of silver nanoparticles (NPs) layer embedded into the organic semiconductor. The memory window widens with increasing Ag NPs layer thickness, a maximum window of 90 V is achieved for 5 nm Ag NPs and the on/off current ratio decreases from 10⁵ to 10 when the Ag NPs layer thickness increases from 1 to 10 nm. We also compare the charge retention properties of the devices with different Ag NPs thicknesses. Our investigation presents a direct approach to optimize the performance of organic memory with the current structure.|
|Rights:||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in S.M. Wang, C.W. Leung & P.K.L. Chan, Appl. Phys. Lett. 97, 023511 (2010) and may be found at http://link.aip.org/link/?apl/97/023511|
|Appears in Collections:||AP Journal/Magazine Articles|
ME Journal/Magazine Articles
Files in This Item:
|ApplPhysLett_97_023511.pdf||717.21 kB||Adobe PDF||View/Open|
All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated. No item in the PolyU IR may be reproduced for commercial or resale purposes.