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|Title:||Anisotropy of the electrical transport properties in a Ni₂MnGa single crystal : experiment and theory|
Or, Derek Siu-wing
Chan, Helen L. W.
|Subjects:||Ab initio calculations|
Shape memory effects
|Publisher:||American Institute of Physics|
|Source:||Journal of applied physics, 15 Apr. 2010, v. 107, no. 8, 083713, p. 1-5.|
|Abstract:||Electrical transport properties in ferromagnetic shape memory Ni–Mn–Ga single crystal have been investigated both in experiment and theory by analyzing electrical resistivity along different crystallographic directions during heating. The experimental results show a clear first-order martensitic transformation and a large anisotropic resistivity AR of 23.7% at the tetragonal martensitic phase. The theoretical conductivity (σ=1/p), estimated using first-principles calculations combined with classical Boltzman transport theory, proves essential crystallographic anisotropic resistivity (AR=31%) in the martensitic phase and agrees well with experimental results. The AR in the martensitic phase is reveled to mainly originate from the splitting of the minority-spin Ni 3d and Ga 4p states near the Fermi level and hence reconstruction of the minority-spin Fermi surface upon martensitic transformation.|
|Rights:||© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in M. Zeng et al., J. Appl. Phys. 107, 083713 (2010) and may be found at http://link.aip.org/link/?jap/107/083713|
|Appears in Collections:||AP Journal/Magazine Articles|
EE Journal/Magazine Articles
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