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|Title:||Stress and its effect on optical properties of AlN nanorods|
|Authors:||Ji, X. H.|
Zhang, Q. Y.
Ling, Z. Y.
Lau, S. P.
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 7 Dec. 2009, v. 95, no. 23, 233105, p.1-3.|
|Abstract:||The stress states in AlN nanorods deposited on Si and its effect on optical properties have been investigated by means of Raman scattering and photoluminescence methods. The observed frequency downshift and linewidth broadening from temperature-dependent Raman scattering can be well described by an empirical relationship taking into account the contributions of the thermal expansion and decay of optical phonons. The phonon-energy difference of the E₂(high) mode between the stress-free bulk-AlN and AlN nanorods appears to increase with increasing temperature, demonstrating that differential thermal expansion between the Si-substrate and AlN nanorods is the key parameter reflecting the stress in the nanorods.|
|Rights:||© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in X.H. Ji et al., Appl. Phys. Lett. 95, 233105 (2009) and may be found at http://link.aip.org/link/?apl/95/233105|
|Appears in Collections:||AP Journal/Magazine Articles|
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