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Please use this identifier to cite or link to this item: http://hdl.handle.net/10397/2464

Title: Magnetotransport properties of p-type carbon-doped ZnO thin films
Authors: Herng, T. S.
Lau, S. P.
Wang, L.
Zhao, B. C.
Yu, S. F.
Tanemura, M.
Akaike, A.
Teng, K. S.
Subjects: Carbon
Curie temperature
Ferromagnetic materials
Hall effect
Hole density
II-VI semiconductors
Magnetic moments
Magnetic semiconductors
Magnetic thin films
Magnetoresistance
Negative resistance
Semiconductor thin films
Spin polarised transport
Wide band gap semiconductors
Zinc compounds
Issue Date: 6-Jul-2009
Publisher: American Institute of Physics
Citation: Applied physics letters, 6 July, 2009, v. 95, no. 1, 012505, p. 1-3.
Abstract: Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p-type conduction with a hole concentration of ~5 X 10¹⁷ cm⁻³. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.
Description: DOI: 10.1063/1.3176434
Rights: © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in T.S. Herng et al., Appl. Phys. Lett. 95, 012505 (2009) and may be found at http://link.aip.org/link/?apl/95/012505
Type: Journal/Magazine Article
URI: http://hdl.handle.net/10397/2464
ISSN: 0003-6951 (print)
1077-3118 (online)
Appears in Collections:AP Journal/Magazine Articles

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