Please use this identifier to cite or link to this item:
|Title:||Magnetotransport properties of p-type carbon-doped ZnO thin films|
|Authors:||Herng, T. S.|
Lau, S. P.
Zhao, B. C.
Yu, S. F.
Teng, K. S.
Magnetic thin films
Semiconductor thin films
Spin polarised transport
Wide band gap semiconductors
|Publisher:||American Institute of Physics|
|Source:||Applied physics letters, 6 July, 2009, v. 95, no. 1, 012505, p. 1-3.|
|Abstract:||Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p-type conduction with a hole concentration of ~5 X 10¹⁷ cm⁻³. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.|
|Rights:||© 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in T.S. Herng et al., Appl. Phys. Lett. 95, 012505 (2009) and may be found at http://link.aip.org/link/?apl/95/012505|
|Appears in Collections:||AP Journal/Magazine Articles|
Files in This Item:
|ApplPhysLett_95_012505.pdf||388.93 kB||Adobe PDF||View/Open|
All items in the PolyU Institutional Repository are protected by copyright, with all rights reserved, unless otherwise indicated. No item in the PolyU IR may be reproduced for commercial or resale purposes.