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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/2454
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| Title: | Mesoscopic phenomena in Au nanocrystal floating gate memory structure |
| Authors: | Chan, Ka-cheung
Lee, Pui-fai
Dai, Jiyan |
| Subjects: | Nanocrystals
Semiconducting silicon compounds
Superconducting materials
Tunnel junctions |
| Issue Date: | 14-Sep-2009 |
| Publisher: | American Institute of Physics |
| Citation: | Applied physics letters, 14 Sept., 2009, v. 95, no. 11, 113109, p. 1-3. |
| Abstract: | A resonant tunneling process is demonstrated in the HfAlO/Au nanocrystals/HfAlO trilayer nonvolatile memory (NVM) structure on Si, where the electrons tunnel back and forth to the Au nanocrystals due to the various mesoscopic behaviors. The electron tunneling behavior in this trilayer structure exhibits dissimilar resemblance to those in double-barrier tunnel junctions taking into account of the correlation of Coulomb blockade effect. The observed specific tunneling process is beneficial in studying the interplays of various mesoscopic physics and application of single electron devices into NVM. |
| Description: | DOI: 10.1063/1.3259651 |
| Rights: | © 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in K.C. Chan, P.F. Lee and J.Y. Dai, Appl. Phys. Lett. 95, 113109 (2009) and may be found at http://apl.aip.org/resource/1/applab/v95/i11/p113109_s1 |
| Type: | Journal/Magazine Article |
| URI: | http://hdl.handle.net/10397/2454 |
| ISSN: | 0003-6951 (print)
1077-3118 (online) |
| Appears in Collections: | AP Journal/Magazine Articles
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