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|Title: ||Process and apparatus for fabricating nano-floating gate memories and memory made thereby|
|Authors: ||Dai, Jiyan|
|Issue Date: ||8-Sep-2009 |
|Citation: ||US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009.|
|Abstract: ||In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.|
|Rights: ||Assignee: The Hong Kong Polytechnic University.|
|Appears in Collections:||AP Patents|
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