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Title: Process and apparatus for fabricating nano-floating gate memories and memory made thereby
Authors: Dai, Jiyan
Lu, Xubing
Lee, Pui-fai
Subjects: Nanoclusters
Semiconductor technology
Issue Date: 8-Sep-2009
Source: US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009.
Abstract: In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.
Rights: Assignee: The Hong Kong Polytechnic University.
Type: Patent
Appears in Collections:Patents of PolyU
AP Patents

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