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PolyU Institutional Repository >
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Please use this identifier to cite or link to this item:
http://hdl.handle.net/10397/1470
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| Title: | Process and apparatus for fabricating nano-floating gate memories and memory made thereby |
| Authors: | Dai, Jiyan
Lu, Xubing
Lee, Pui-fai |
| Subjects: | Nanoclusters
Semiconductor technology
Nanocrystals
Dielectrics |
| Issue Date: | 8-Sep-2009 |
| Citation: | US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009. |
| Abstract: | In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate. |
| Rights: | Assignee: The Hong Kong Polytechnic University. |
| Type: | Patent |
| URI: | http://hdl.handle.net/10397/1470 |
| Appears in Collections: | AP Patents
Patents of PolyU
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