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|Title:||Process and apparatus for fabricating nano-floating gate memories and memory made thereby|
|Source:||US Patent 7,585,721 B2. Washington, DC: US Patent and Trademark Office, 2009.|
|Abstract:||In a process for fabricating a nano-floating gate memory structure, a substrate and a nanocluster source are firstly provided. The nanocluster source is activated for generating a beam of nanoclusters towards the substrate, and at least part of the nanoclusters are received atop the substrate. Thereby, a plurality of nanoclusters of controllable size are formed atop the substrate.|
|Rights:||Assignee: The Hong Kong Polytechnic University.|
|Appears in Collections:||Patents of PolyU|
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