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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
1-Jul-2003 Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layersFong, Wai-keung Patrick; Ng, Shek-wai; Leung, B. H.; Surya, Charles
1-May-2011 Degradation mechanism beyond device self-heating in high power light-emitting diodesYung, Kam-chuen Winco; Liem, H.; Choy, H. S.; Lun, W. K.
1-Jul-2001 The effects of interdiffusion on the subbands in GaₓIn₁₋ₓN₀.₀₄As₀.₉₆/GaAs quantum well for 1.3 and 1.55 μm operation wavelengthsChan, Michael C. Y.; Surya, Charles; Wai, Ping-kong Alexander
23-Jun-2003 Highly reflective distributed Bragg reflectors using a deeply etched semiconductor/air grating for InGaN/GaN laser diodesSaitoh, Tadashi; Kumagai, Masami; Wang, Hailong; Tawara, Takehiko; Nishida, Toshio; Akasaka, Testuya; Kobayashi, Naoki
19-Jul-2006 Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contactsWang, R. X.; Xu, S. J.; Djurišić, A. B.; Beling, C. D.; Cheung, C. K.; Cheung, C. H.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, Xiaoming
15-May-2008 Infrared luminescence and amplification properties of Bi-doped GeO₂-Ga₂O₃-Al₂O₃glassesZhou, Shifeng; Dong, Huafang; Zeng, Heping; Hao, J. H.; Chen, Jingxin; Qiu, Jianrong
15-Jan-2000 Ion channeling studies on mixed phases formed in metalorganic chemical vapor deposition grown Mg-doped GaN on Al₂O₃(0001)Sundaravel, B.; Luo, E. Z.; Xu, J. B.; Wilson, I. H.; Fong, Wai-keung Patrick; Wang, L. S.; Surya, Charles
15-Mar-2002 Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxyLeung, B. H.; Fong, Wai-keung Patrick; Zhu, C. F.; Surya, Charles
15-Apr-2011 Nitrogen doped-ZnO/n-GaN heterojunctionsChen, Xin Yi; Fang, Fang; Ng, Alan M. C.; Djurišić, A. B.; Cheah, K. W.; Ling, C. -C.; Chan, W. K.; Fong, Wai-keung Patrick; Lui, H. F.; Surya, Charles
1-Apr-2010 Physical mechanisms for hot-electron degradation in GaN light-emitting diodesLeung, K. K.; Fong, Wai-keung Patrick; Chan, Paddy K. L.; Surya, Charles
1-Nov-2000 Piezoelectric coefficient of aluminum nitride and gallium nitrideLueng, Chiu-ming; Chan, Helen L. W.; Surya, Charles; Choy, Chung-loong
3-Oct-2006 Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contactsWang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, Xiaoming
15-Feb-2006 A thermal model for static current characteristics of AlGaN/GaN high electron mobility transistors including self-heating effectChang, Yuancheng; Zhang, Yimen; Zhang, Yuming; Tong, K. Y.
1-Nov-2011 ZnO nanorod/GaN light-emitting diodes: the origin of yellow and violet emission bands under reverse and forward biasChen, Xin Yi; Ng, Alan M. C.; Fang, Fang; Ng, Yip Hang; Djurišić, A. B.; Tam, Hoi Lam; Cheah, K. W.; Gwo, Shangjr; Chan, Wai Kin; Fong, Wai-keung Patrick; Lui, Hsian Fei; Surya, Charles
Showing results 1 to 14 of 14

 

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