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Showing results 1 to 4 of 4
Issue DateTitleAuthor(s)
1-May-2006 Comparison of interfacial and electrical characteristics of HfO₂and HfAlO high-k dielectrics on compressively strained Si[sub 1−x]Ge[sub x]Curreem, K. K. S.; Lee, Pui-fai; Wong, K. S.; Dai, Jiyan; Zhou, M. J.; Wang, J.; Li, Quan
15-Mar-2003 Growth and characterization of Hf-aluminate high-k gate dielectric ultrathin films with equivalent oxide thickness less than 10 ÅLee, P. F.; Dai, Jiyan; Wong, Kin-hung; Chan, Helen L. W.; Choy, Chung-loong
19-Jul-2006 Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contactsWang, R. X.; Xu, S. J.; Djurišić, A. B.; Beling, C. D.; Cheung, C. K.; Cheung, C. H.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, Xiaoming
1-Apr-2004 X-ray photoemission spectroscopy of nonmetallic materials: Electronic structures of boron and BᵪOᵧOng, C. W.; Huang, Haitao; Zheng, B.; Kwok, R. W. M.; Hui, Y. Y.; Lau, W. M.
Showing results 1 to 4 of 4

 

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