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Browsing by Subject "Semiconductor epitaxial layers"

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Showing results 1 to 6 of 6
Issue DateTitleAuthor(s)
1-Jul-2003 Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layersFong, Wai-keung Patrick; Ng, Shek-wai; Leung, B. H.; Surya, Charles
23-Feb-2010 Kinetic Monte Carlo simulation of faceted islands in heteroepitaxy using a multistate lattice modelLam, Chi-hang
15-Mar-2002 Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxyLeung, B. H.; Fong, Wai-keung Patrick; Zhu, C. F.; Surya, Charles
1-May-2012 Molecular beam epitaxy growth of high quality p-doped SnS van der Waals epitaxy on a graphene buffer layerWang, W.; Leung, K. K.; Fong, Wai-keung Patrick; Wang, S. F.; Hui, Y. Y.; Lau, S. P.; Chen, Z.; Shi, L. J.; Cao, C. B.; Surya, Charles
3-Oct-2006 Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contactsWang, R. X.; Xu, S. J.; Shi, S. L.; Beling, C. D.; Fung, S.; Zhao, D. G.; Yang, H.; Tao, Xiaoming
19-Aug-2002 Structural and optical properties of wurtzite Mg[sub x]Zn[sub 1-x]S(≤x≤0.25) films grown on (0001) Al₂O₃ by pulsed-laser depositionOng, H. C.; Dai, Jiyan
Showing results 1 to 6 of 6

 

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